SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce a leakage current between a drain and a source by using a compound conductor having a work function with more than 5.5 electron volts. CONSTITUTION: An oxide semiconductor film(106) includes indium. A gate electrode includes a compound conductor. An insulating layer(102) is formed between the oxide semiconductor film and the gate electrode. The compound conductor includes the indium and nitrogen. A band gap in the compound conductor is less than 2.8 electron volts.