PURPOSE: A method for reproducing a wafer is provided to reproduce a wafer and increase use times by minimizing the reduction of thickness and external diameter of a wafer. CONSTITUTION: A residue remaining on a wafer separated from a semiconductor layer is removed by using HCl(Hydrochloric Acid) and Cl2(Chlorine) gases under high temperatures and low pressure(S100). The semiconductor layer is a nitride semiconductor layer. The wafer eliminating the residue is ground in a physical or chemical method(S200). A ground wafer is washed(S300).
申请公布号
KR20120040791(A)
申请公布日期
2012.04.30
申请号
KR20100102217
申请日期
2010.10.20
申请人
SAMSUNG LED CO., LTD.
发明人
PARK, KI HO;SA, KONG TAN;YOON, SUK HO;RYU, HYUN SEOK;SHIN, BO A