SEMICONDUCTOR DEVICE AND METHOD OF FORMING TSV INTERPOSER WITH SEMICONDUCTOR DIE AND BUILD-UP INTERCONNECT STRUCTURE ON OPPOSING SURFACES OF INTERPOSER

摘要

Abstract SEMICONDUCTOR DEVICE AND METHOD OF FORMING TSV INTERPOSERWITH SEMICONDUCTOR DIE AND BUILD—UP INTERCONNECT STRUCTURE ON OPPOSING SURFACES OF THE INTERPOSERA semiconductor device has a substrate with first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the substrate. A first conductive layer is formed over the first surface of the substrate electrically connected to the conductive vias. A first semiconductor die is mounted over the first surface of the substrate. The first semiconductor die and substrate are mounted to a carrier. An encapsulant is deposited over the first semiconductor die, substrate, and carrier. A portion of the second surface of the substrate is removed to expose the conductive vias. An interconnect structure is formed over a surface of the substrate opposite the first semiconductor die. A second semiconductor die can be stacked over the first semiconductor die. A second semiconductor die can be mounted over the first surface of the substrate adjacent to the first semiconductor die.(Fig. 5)