| 摘要 |
PURPOSE: A multi step type t-gate manufacturing method is provided to completely fill electrode materials in a wider gate foot pattern by additional etching in a photosensitive layer, thereby improving the yield of a device. CONSTITUTION: Sacrificial layers(320,330) are formed on a substrate in which a source and drain are formed. A plurality of photosensitive layers is formed on the upper part of the sacrificial layers. A gate head pattern and a first gate foot pattern are formed on a plurality of photosensitive layers and the sacrificial layer is exposed. A second gate foot pattern in which an inclined surface is formed by etching the sacrificial layer is formed. An entrance of a first gate foot pattern is expanded. An electrode material is evaporated on the front surface of the substrate. A plurality of photosensitive layers is eliminated.
|
