| 摘要 |
PURPOSE: A method for manufacturing nano scale t-type gate using a sacrificial layer is provided to form stable T-type gate with an excellent current gain property and without inclination by reducing the size of the t-gate which is formed by the post-processing. CONSTITUTION: Sacrificial layers(290,200) are formed on a substrate(200) in which a source and a drain are formed. A photosensitive layer is formed on the upper part of the sacrificial layer. An electronic beam is irradiated on the photosensitive layer and an area, in which a gate is formed, is patterned and the sacrificial layer is exposed. A pattern is formed a wall in which the sacrificial layer is etched and slope is formed. An electrode material is evaporated in the entire of the substrate. The photosensitive layer is eliminated.
|
