| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device capable of improving electric power generation characteristics of a solar cell having a hetero junction cell composed of a p-type crystal Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer. <P>SOLUTION: A method of manufacturing a photoelectric conversion device 100 having a hetero junction cell 1 including a stack of an i-type amorphous silicon semiconductor layer 12 and an n-type amorphous silicon semiconductor layer 13 on a substrate (p-type crystal Ge) 11 in this order comprises: a PH<SB POS="POST">3</SB>exposure processing step of heating the substrate 11 from which an oxide film formed on a surface is removed to a predetermined temperature, and then disposing the substrate in a vacuum chamber to expose the substrate to a PH<SB POS="POST">3</SB>gas; an i-layer deposition step of depositing the i-type amorphous silicon semiconductor layer 12 on the PH<SB POS="POST">3</SB>-exposed substrate; an n-layer deposition step of depositing the n-type amorphous silicon semiconductor layer 13 on the i-type amorphous silicon semiconductor layer 12; and an electrode formation step of forming electrodes (2, 3, and 4) on the n-type amorphous silicon semiconductor layer and on the rear surface of the substrate 11. <P>COPYRIGHT: (C)2012,JPO&INPIT |
