| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor capable of inhibiting significant increase in generation of holes and increase in leakage current. <P>SOLUTION: In a thin film transistor according to the present invention, a semiconductor layer 12 has extension parts P1, P2, P3 extending outward from a gate electrode 2 at a portion where a source electrode 7 and a drain electrode 8 are led from side edge parts 2A, 2B of the gate electrode 2 when viewed from above. Portions L1, L2 where the source electrode 7 and the side edge parts 2A, 2B cross, when viewed from above, do not overlap a portion LS of the source electrode 7 in contact with a channel formation region 13 in a channel length direction Y. Further, a portion L3 where the drain electrode 8 and the side edge part 2B of the gate electrode 2 cross, when viewed from above, does not overlap a portion LD of the drain electrode 8 in contact with the channel formation region 13 in the channel length direction Y. <P>COPYRIGHT: (C)2012,JPO&INPIT |
