| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a distance sensor and a distance image sensor capable of achieving high speed transfer of electrical charge while improving sensitivity. <P>SOLUTION: A photo-gate electrode PG is a rectangular shape where a planar shape has a first and a second long sides LS1 and LS2 facing each other in a first direction and a first and a second short sides SS1 and SS2 facing each other in a second direction. A plurality of semiconductor areas FD1 and FD2 are arranged to face on both sides of the photo-gate electrode PG and to be spatially separated from each other along the second direction. An area immediately below the photo-gate electrode PG includes first areas CG1 located between the semiconductor areas FD1 and FD2 facing in the first direction and second areas CG2 sandwiched between the first areas CG1 in the second direction. Third semiconductor areas SR1 are arranged in the second areas CG2. The third semiconductor areas SR1 enhance potential in the second areas CG2 more than potential in the first areas CG1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
