发明名称 |
IMPROVED SCHOTTKY RECTIFIER |
摘要 |
A semiconductor rectifier includes a semiconductor substrate having a first type of conductivity. A first layer, which is formed on the substrate, has the first type of conductivity and is more lightly doped than the substrate. A second layer having a second type of conductivity is formed on the substrate and a metal layer is disposed over the second layer. The second layer is lightly doped so that a Schottky contact is formed between the metal layer and the second layer. A first electrode is formed over the metal layer and a second electrode is formed on a backside of the substrate. |
申请公布号 |
WO2012054682(A2) |
申请公布日期 |
2012.04.26 |
申请号 |
WO2011US57012 |
申请日期 |
2011.10.20 |
申请人 |
VISHAY GENERAL SEMICONDUCTOR LLC;HSU, CHIH-WEI;UDREA, FLORIN;LIN, YIH-YIN |
发明人 |
HSU, CHIH-WEI;UDREA, FLORIN;LIN, YIH-YIN |
分类号 |
H01L29/872;H01L21/329;H01L29/868 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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