发明名称 |
METHOD FOR FORMING AN ALUMINUM NITRIDE THIN FILM |
摘要 |
The method is adapted for forming an aluminum nitride thin film having a high density and a high resistance to thermal shock by a chemical vapor deposition process and includes steps of mixing a gas containing aluminum atoms (Al) and a gas containing nitrogen atoms (N) with a gas containing oxygen atoms (O) and feeding the mixture to a member to be covered by an aluminum nitride thin film. |
申请公布号 |
US2012100698(A1) |
申请公布日期 |
2012.04.26 |
申请号 |
US201113189006 |
申请日期 |
2011.07.22 |
申请人 |
KATO KOJI;KANO SHOJI;YAMAMURA WAICHI;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
KATO KOJI;KANO SHOJI;YAMAMURA WAICHI |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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