发明名称 |
METHODS FOR FABRICATING CAPACITOR AND METHODS FOR FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR |
摘要 |
Example embodiments relate to methods for fabricating a capacitor and methods for fabricating a semiconductor device including the capacitor. The methods for fabricating a capacitor may include forming a preliminary lower electrode with a first area on a substrate; implanting ions in the preliminary lower electrode to form a lower electrode with a second area that is larger or substantially larger than the first area; and forming a dielectric layer and an upper electrode on the lower electrode. |
申请公布号 |
US2012100687(A1) |
申请公布日期 |
2012.04.26 |
申请号 |
US201113274695 |
申请日期 |
2011.10.17 |
申请人 |
LIM HANJIN;SEO JONG-BOM;NAM SEOKWOO;KIM BONGHYUN;LEE YONGJAE;IM KIVIN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM HANJIN;SEO JONG-BOM;NAM SEOKWOO;KIM BONGHYUN;LEE YONGJAE;IM KIVIN |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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