发明名称 METHODS FOR FABRICATING CAPACITOR AND METHODS FOR FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR
摘要 Example embodiments relate to methods for fabricating a capacitor and methods for fabricating a semiconductor device including the capacitor. The methods for fabricating a capacitor may include forming a preliminary lower electrode with a first area on a substrate; implanting ions in the preliminary lower electrode to form a lower electrode with a second area that is larger or substantially larger than the first area; and forming a dielectric layer and an upper electrode on the lower electrode.
申请公布号 US2012100687(A1) 申请公布日期 2012.04.26
申请号 US201113274695 申请日期 2011.10.17
申请人 LIM HANJIN;SEO JONG-BOM;NAM SEOKWOO;KIM BONGHYUN;LEE YONGJAE;IM KIVIN;SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM HANJIN;SEO JONG-BOM;NAM SEOKWOO;KIM BONGHYUN;LEE YONGJAE;IM KIVIN
分类号 H01L21/02 主分类号 H01L21/02
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