发明名称 CURRENT DETECTION CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a current detection circuit by which the detection range of current is expanded. <P>SOLUTION: A current detection circuit includes: a first resistance element in which one terminal is connected to a first connection terminal and the other terminal is connected to a second connection terminal; a second resistance element in which one terminal is connected to one terminal of the first resistance element; a third resistance element in which one terminal is connected to the other terminal of the first resistance element; a first field effect transistor in which a source is connected to the other terminal of the second resistance element; a second field effect transistor in which a source is connected to the other terminal of the third resistance element and a drain and a gate are connected to the gate of the first field effect transistor; a third field effect transistor in which a source is connected to the source of the second field effect transistor and a gate is connected to the drain of the first field effect transistor; and a fourth resistance element in which one terminal is connected to the drain of the third field effect transistor and voltage is input in the other terminal. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012083340(A) 申请公布日期 2012.04.26
申请号 JP20110196135 申请日期 2011.09.08
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 NISHIJIMA TATSUJI
分类号 G01R19/00 主分类号 G01R19/00
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