发明名称 |
METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a liquid crystal display device with low cost and high productivity by remarkably reducing manufacturing steps and provide a liquid crystal display device with low power consumption and high reliability. <P>SOLUTION: Etching of a semiconductor layer including a part on gate wiring and formation of a contact hole for connecting a pixel electrode and a drain electrode are performed by the same step of photolithography step and etching step to reduce the photolithography step. A part of the gate wiring exposed by this step is covered by an insulating layer, which is made to double as spacer for maintaining an interval between liquid crystal layers. By reducing the photolithography step, it is possible to provide a liquid crystal display device with low cost and high productivity. Further, since an oxide semiconductor is used for the semiconductor layer, power consumption is reduced and the liquid crystal display device with high reliability can be provided. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012084866(A) |
申请公布日期 |
2012.04.26 |
申请号 |
JP20110199004 |
申请日期 |
2011.09.13 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;MIYAKE HIROYUKI |
分类号 |
H01L21/336;G02F1/1368;H01L21/28;H01L21/768;H01L29/417;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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