发明名称 Methods of Forming Capacitors
摘要 Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.
申请公布号 US2012100283(A1) 申请公布日期 2012.04.26
申请号 US201113339692 申请日期 2011.12.29
申请人 ANTONOV VASSIL;BHAT VISHWANATH;CARLSON CHRIS;MICRON TECHNOLOGY, INC. 发明人 ANTONOV VASSIL;BHAT VISHWANATH;CARLSON CHRIS
分类号 B05D5/12 主分类号 B05D5/12
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