发明名称 |
DIRECT CONTACT IN TRENCH WITH THREE-MASK SHIELD GATE PROCESS |
摘要 |
A semiconductor substrate may be etched to form trenches with three different widths. A first conductive material is formed at the bottom of the trenches. A second conductive material separated by an insulator is formed over the first conductive material. A first insulator layer is formed on the trenches. A body layer is formed in the substrate. A source is formed in the body layer. A second insulator layer is formed on the trenches and source. Source and gate contacts are formed through the second insulator layer. Source and gate metal are formed on the second insulator layer. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. |
申请公布号 |
US2012098059(A1) |
申请公布日期 |
2012.04.26 |
申请号 |
US201213343666 |
申请日期 |
2012.01.04 |
申请人 |
TAI SUNG-SHAN;YILMAZ HAMZA;BHALLA ANUP;CHANG HONG;CHEN JOHN;ALPHA & OMEGA SEMICONDUCTOR INCORPORATED |
发明人 |
TAI SUNG-SHAN;YILMAZ HAMZA;BHALLA ANUP;CHANG HONG;CHEN JOHN |
分类号 |
H01L21/28;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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