CHEMICAL MECHANICAL POLISHING LIQUID

摘要

Disclosed is a chemical mechanical polishing liquid for the planarization of a blocking layer, which comprises at least one kind of abrasive particle, a metal chelating agent, a silicon dioxide polishing promoter, a composite metal anticorrosive, an auxiliary cleaning constituent and an oxidant. During polishing of the blocking layer, the polishing liquid can effectively remove particle residues on the surface of wafers and metal compound residues on polishing pads, and has relatively good stability.