METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique for manufacturing a semiconductor device having a high performance and high reliable transistor.

SOLUTION: When forming a wiring layer from a conductive layer, a protective conductive film for protecting an oxide semiconductor layer is formed between the oxide semiconductor layer and the conductive layer to perform two stages of etching. A first etching step employs an etching method performed under a condition that the protective conductive film is less prone to be etched than the conductive layer and an etching selection ratio of the conductive layer to the protective conductive film is high. A second etching step employs an etching method performed under a condition that the protective conductive film is more prone to be etched than the oxide semiconductor layer and the etching selection ratio of the protective conductive film to the oxide semiconductor layer is high.

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