| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an organic thin-film transistor insulation layer material capable of producing an organic thin-film transistor having a small absolute value of threshold voltage and a small hysteresis. <P>SOLUTION: The organic thin-film transistor gate insulation layer material contains : a polymer compound (A), having a repeating unit having a group containing fluorine atoms, a repeating unit having a photodimerization reactive group, and a repeating unit having a first functional group which generates a second functional group to react with active hydrogen by the action of electromagnetic waves or heat; and an active hydrogen compound (B). <P>COPYRIGHT: (C)2012,JPO&INPIT |
