METHOD OF DETACHING THIN FILM AT MODERATE TEMPERATURE AFTER CO-IMPLANTATION

摘要

PROBLEM TO BE SOLVED: To provide a method of detaching a thin film from a source substrate.

SOLUTION: The method of detaching a thin film from a source substrate includes the steps of: implanting ions 2 or gaseous species 2 in the source substrate 1 so as to form therein a buried zone weakened by the presence of defects; and splitting in the weakened zone 3 leading to the detachment of the thin film 5 from the source substrate 1. Two species are implanted of which one is adapted to form defects and the other is adapted to occupy those defects, and the detachment is made at a temperature lower than that for which detachment could be obtained with solely the dose of the first species.

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