| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a silicon film that is formed by polysilicon, has a steep impurity concentration profile, and has a flat top surface, and to provide a method of manufacturing the same. <P>SOLUTION: A method of manufacturing a semiconductor device comprises a step of forming a silicon film. The step of forming the silicon film includes a first step of depositing amorphous silicon, and a second step of producing silicon crystal grains with the deposition of the amorphous silicon, and of setting the deposition rate of the amorphous silicon higher than the growth rate of the silicon crystal grains. <P>COPYRIGHT: (C)2012,JPO&INPIT |
