发明名称 INTEGRATED CIRCUITS WITH BACKSIDE METALIZATION AND PRODUCTION METHOD THEREOF
摘要 An embodiment of an integrated device, including a chip of semiconductor material wherein an integrated circuit is integrated, is proposed; the integrated device includes a set of contact terminals for contacting the integrated circuit. At least one contact terminal of said set of contact terminals includes a contact layer of metal material being suitable to be directly coupled mechanically to an element external to the chip, and a coupling element for improving an electrical and/or mechanical coupling between the contact layer and the chip. The coupling element includes a coupling layer being formed by a combination between the metal material of the contact layer and the semiconductor material of the chip, with the coupling layer that is directly coupled to the chip and to the contact layer.
申请公布号 US2012098135(A1) 申请公布日期 2012.04.26
申请号 US201113281370 申请日期 2011.10.25
申请人 BADALA' PAOLO;SANTANGELO ANTONELLO;ALBERTI ALESSANDRA;STMICROELECTRONICS S.R.L. 发明人 BADALA' PAOLO;SANTANGELO ANTONELLO;ALBERTI ALESSANDRA
分类号 H01L23/48;H01L21/28 主分类号 H01L23/48
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