| 摘要 |
A method for recycling a wafer is provided. The method removes residues remaining on the wafer separated from a semiconductor layer, using HCl and Cl2 gases under high temperature and low pressure conditions. According to the method, damage of a surface of the wafer is minimized. In addition, since reduction in thickness and an outer diameter of the wafer is minimized, a number of attempts at reprocessing the wafer may be increased. |
