发明名称 PATTERN RECOGNITION AND METROLOGY STRUCTURE FOR AN X-INITIATIVE LAYOUT DESIGN
摘要 Systems and/or methods are disclosed for aligning multiple layers of a multi-layer semiconductor device fabrication process and/or system utilizing a composite alignment mark. A component is provided to form the composite alignment mark, such that a first portion of the composite alignment mark is associated with a layer of the wafer and a second portion of the composite alignment mark is associated with a disparate layer of the wafer. An alignment component is utilized to align a reticle for a layer to be patterned to the composite alignment mark.
申请公布号 KR101138449(B1) 申请公布日期 2012.04.26
申请号 KR20067004386 申请日期 2004.08.30
申请人 发明人
分类号 G03F9/00;G03F7/20;H01L21/20 主分类号 G03F9/00
代理机构 代理人
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