| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new aqueous molybdenum oxide polishing slurry for chemical mechanical smoothing which is effective for polishing copper at a high polishing speed. <P>SOLUTION: In the aqueous polishing slurry for chemical mechanical smoothing of a copper layer on a semiconductor substrate which contains fine particles of MoO<SB POS="POST">3</SB>which are visually dissolved in a solution of deionized water and an oxidant and have an average particle size of 10,000 nm or less and an oxidant, the fine particles of the MoO<SB POS="POST">3</SB>are present in an amount of 0.1-10 wt.%, and contain the oxidant, a complex forming agent and a surface active agent. <P>COPYRIGHT: (C)2012,JPO&INPIT |
