| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vertical semiconductor device capable of stably obtaining improved pinch-off characteristics and improved breakdown voltage performance by surely fixing a potential of a p-type GaN barrier layer. <P>SOLUTION: A semiconductor device comprises: a GaN-based stack 15 having an opening 28; a regrowth layer 27 including a channel located so as to cover the wall surfaces of the opening; an n<SP POS="POST">+</SP>-type source layer 8 ohmic-contacting source electrodes S; a p-type GaN barrier layer 6; and a p<SP POS="POST">+</SP>-GaN auxiliary layer 7 located between the n<SP POS="POST">+</SP>-type source layer 8 and the p-type GaN barrier layer 6. In order for a potential of the p-type GaN barrier layer 6 to fix a source potential, the p<SP POS="POST">+</SP>-GaN auxiliary layer 7 forms a tunnel junction with the n<SP POS="POST">+</SP>-type source layer 8. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012084739(A) |
申请公布日期 |
2012.04.26 |
| 申请号 |
JP20100230770 |
申请日期 |
2010.10.13 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
KIYAMA MAKOTO;SAITO TAKESHI;OKADA MASAYA;UENO MASANORI;YAEGASHI SEIJI;INOUE KAZUTAKA;YOKOYAMA MITSUNORI |
| 分类号 |
H01L29/80;H01L21/336;H01L21/338;H01L29/12;H01L29/778;H01L29/78;H01L29/812 |
主分类号 |
H01L29/80 |
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