发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem that when applying a manufacturing method in which a fluorescent substance layer containing a fluorescent substance having a conversion efficiency greatly varying at around a peak wavelength of light irradiated from a semiconductor layer of an LED element is formed on a wafer on which a number of LED elements are disposed and the wafer is singulated into pieces of LED elements, luminous colors of the individual LED elements vary because peak wavelengths of the individual LED elements take different values within a range of a few nanometers. <P>SOLUTION: A semiconductor light-emitting element manufacturing method comprises the steps of (a) preparing a wafer provided with a light-emitting layer and a connection electrode on one face, (b) obtaining a peak wavelength distribution of the wafer and forming phosphor on the other face of the wafer by adjusting a thickness based on the peak wavelength distribution, and (c) singulating the wafer into pieces of LED elements by cutting the wafer. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012084622(A) 申请公布日期 2012.04.26
申请号 JP20100228164 申请日期 2010.10.08
申请人 CITIZEN HOLDINGS CO LTD;CITIZEN ELECTRONICS CO LTD 发明人 HORIUCHI MEGUMI
分类号 H01L33/50 主分类号 H01L33/50
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