METHODS FOR ETCHING SILICON-BASED ANTIREFLECTIVE LAYERS
摘要
Methods for etching silicon-based antireflective layers are provided herein. In some embodiments, a method of etching a silicon-based antireflective layer may include providing to a process chamber a substrate having a multiple-layer resist thereon, the multiple-layer resist comprising a patterned photoresist layer defining features to be etched into the substrate disposed above a silicon-based antireflective coating; and etching the silicon-based antireflective layer through the patterned photoresist layer using a plasma formed from a process gas having a primary reactive agent comprising a chlorine-containing gas. In some embodiments, the chlorine-containing gas is chlorine (Cl2).
申请公布号
WO2011133349(A3)
申请公布日期
2012.04.26
申请号
WO2011US31893
申请日期
2011.04.11
申请人
APPLIED MATERIALS, INC.;ZHOU, YIFENG;ZHOU, QINGJUN;PATZ, RYAN;PENDER, JEREMIAH T.;ARMACOST, MICHAEL D.
发明人
ZHOU, YIFENG;ZHOU, QINGJUN;PATZ, RYAN;PENDER, JEREMIAH T.;ARMACOST, MICHAEL D.