发明名称 |
METHOD OF MANUFACTURING SOURCE/DRAIN STRUCTURES |
摘要 |
An integrated circuit device and method for manufacturing the integrated circuit device provide improved control over a shape of a trench for forming the source and drain features of integrated circuit device, by forming a second doped region in a first doped region and removing the first and the second doped regions by a first and a second wet etching processes. |
申请公布号 |
US2012100681(A1) |
申请公布日期 |
2012.04.26 |
申请号 |
US20100981610 |
申请日期 |
2010.12.30 |
申请人 |
FANG ZIWEI;XU JEFF J.;HUANG MING-JIE;HUANG YIMIN;WU ZHIQIANG;CAO MIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
FANG ZIWEI;XU JEFF J.;HUANG MING-JIE;HUANG YIMIN;WU ZHIQIANG;CAO MIN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|