发明名称 Method for observing status of plasma chamber to control process of coating e.g. glass substrate, during semiconductor manufacturing process, involves supplying measurement signal into plasma chamber with measurement signal frequency
摘要 <p>The method involves arranging a workpiece (12) in a plasma chamber (11). An excitation signal with excitation fundamental frequency is supplied into the plasma chamber by the workpiece for stimulating and/or maintaining a plasma (13) in the plasma chamber. A detection signal of the plasma chamber is received and analyzed. A measurement signal is supplied into the plasma chamber with measurement signal frequency in a continuous or pulsed manner, where the measurement signal frequency deviates from the excitation fundamental frequencies. An independent claim is also included for a device for observing a status of a plasma chamber.</p>
申请公布号 DE102011007596(B3) 申请公布日期 2012.04.26
申请号 DE20111007596 申请日期 2011.04.18
申请人 HUETTINGER ELEKTRONIK GMBH + CO. KG 发明人 BANNWARTH, MARKUS;FRITSCH, CHRISTIAN;KRAUSSE, DANIEL;MERTE, ROLF, DR.;NITSCHKE, MORITZ;WIEDEMUTH, PETER, DR.;BOCK, CHRISTIAN, DR.;GLUECK, MICHAEL;KIRCHMEIER, THOMAS;MANN, EKKEHARD;NEDUNURI, KRISHNA KISHORE;STEUBER, MARTIN;WINTERHALTER, MARKUS;HELLER, ULRICH
分类号 G01N22/00;C23C14/52;H01L21/66;H05H1/30;H05H1/46 主分类号 G01N22/00
代理机构 代理人
主权项
地址