SEMI-INSULATING SIC CRYSTAL, METHOD FOR MANUFACTURING SAME, SUBSTRATE FOR DEVICE, AND SUBSTRATE FOR IC

摘要

The method for manufacturing a semi-insulating SiC crystal of the present invention manufactures a semi-insulating SiC crystal having a resistivity of 1 × 10+5 O·cm or greater by irradiating an n-type conductive SiC crystal with a donor density of 1 × 1013 - 1 × 1019 per cm3 with an electron beam having an energy of 80 keV or greater at a fluence of 1 × 10+16 per cm2 per donor density of 1 × 10+16 per cm3. The semi-insulating SiC crystal of the present invention is produced by this manufacturing method. A substrate for high frequency devices and a substrate for ICs that use this semi-insulating SiC crystal are also proposed.