发明名称 METHOD FOR DRIVING SEMICONDUCTOR DEVICE
摘要 <p>It is an object to obtain a memory element (DRAM) storing multilevel data easily. The amount of charge accumulated in a capacitor of a memory element (DRAM) is controlled by changing the potential of a wiring (a bit line), which is used for writing data to the memory element (DRAM), in a period in which a transistor included in the memory element (DRAM) is on. Thus, multilevel data stored in the memory element (DRAM) can be obtained without a complex configuration of a semiconductor device including the memory element (DRAM).</p>
申请公布号 WO2012053374(A1) 申请公布日期 2012.04.26
申请号 WO2011JP73151 申请日期 2011.09.30
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;KAMATA, KOICHIRO 发明人 KAMATA, KOICHIRO
分类号 G11C11/56;G11C11/404;H01L21/8242;H01L27/108 主分类号 G11C11/56
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