METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with an improved pinch-off characteristic or an improved channel layer mobility and having good electrical characteristics.

SOLUTION: A method of manufacturing a semiconductor device includes the following steps of: forming a GaN-system semiconductor layer 20 on a substrate 10; forming an opening 28 on the GaN-system semiconductor layer; forming an electron transit layer 22 and an electron supply layer 26 on a lateral face of the opening; forming a gate electrode 32 on a lateral face of the electron supply layer on the opening side; forming a source electrode 30 on the GaN-system semiconductor layer; and forming a drain electrode 34 connected with a surface opposite to the source electrode of the GaN-system semiconductor layer.

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