| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable GaN-based HEMT capable of high-volume production by improving heat endurance of a source electrode and a drain electrode, and removing destabilizing factors affecting an ohmic property in a manufacturing process. <P>SOLUTION: A compound semiconductor device comprises a substrate, a gallium nitride-based semiconductor formed on the substrate, a gallium nitride-based protection layer formed on the gallium nitride-based semiconductor, and an ohmic electrode formed of tantalum and aluminum laminated in no particular order on the gallium nitride-based protection layer. A film thickness of the gallium nitride-based protection layer at a portion on which the ohmic electrode is formed is thinner than that of the gallium nitride-based protection layer at a portion on which the ohmic electrode is not formed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
