| 摘要 |
There is provided a light-emitting element in which the driving voltage is reduced and light extraction efficiency is improved, a method of manufacturing the light-emitting element, a lamp, electronic equipment, and a mechanical apparatus. This is achieved by using a light-emitting element (1) which includes an n-type semiconductor layer (12), a light emission layer (13), a p-type semiconductor layer (14), and a titanium oxide-based conductive film layer (15), laminated in order on one face of a substrate (11), wherein a first oxide containing an element that is any one of In, Al, and Ga and a second oxide containing either Zn or Sn are present between the p-type semiconductor layer (14) and the titanium oxide-based conductive film layer (15), and the mass ratio of the second oxide to the total of the first oxide and the second oxide is in a range of 1 to 20 mass %.
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