GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

The present invention relates to a group III nitride semiconductor light emitting element comprising: a first nitride semiconductor layer having a first type of conductivity; a second nitride semiconductor layer having a second type of conductivity that differs from the first type of conductivity; an active layer which is positioned between the first nitride semiconductor layer and the second nitride semiconductor layer and generates light by means of electron-hole recombination; a recess formed by removing part of the second nitride semiconductor layer at least; a first electrode formed on the first nitride semiconductor layer exposed by the removal; a second electrode formed on the second nitride semiconductor layer; and a branch electrode which is electrically connected to the second nitride semiconductor layer and the second electrode and of which part is positioned at the recess.