发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME
摘要 A thin film transistor ("TFT") substrate includes a gate line formed on a base substrate, a data line insulated from the gate line, and a TFT formed at the intersection between the gate line and the data line. A line width of the gate line is greater than a line width of the data line. The data line includes a first data line insulated from and intersected with the gate line and a second data line intersecting the first data line and having an end electrically connected to the data line. Further, a drain electrode of the TFT is spaced apart from the data line by a predetermined interval. A display device comprising the TFT substrate and a method of fabricating the TFT substrate are also disclosed. Thus, the present invention can be prepared against the misalignment due to the expansion or shrinkage of the substrate during the process of fabricating the LCD device using a flexible substrate.
申请公布号 KR101138429(B1) 申请公布日期 2012.04.26
申请号 KR20050066864 申请日期 2005.07.22
申请人 发明人
分类号 G02F1/136 主分类号 G02F1/136
代理机构 代理人
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