MULTI-FUNCTIONAL NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF THE SAME

摘要

PURPOSE: A multi-functional non-volatile memory device and a fabrication method thereof are provided to prevent a short channel effect by forming a channel region having a recess structure. CONSTITUTION: A channel region(300) is formed into a recess structure. A first resistance variable insulating layer(210) is formed on a substrate on which the channel region is formed. A resistance variable charge trapping layer(220) is formed on the first resistance variable insulating layer. The resistance variable charge trapping layer is composed of a resistance variable domain(222) and a pair of charge trapping domains(224a,224b). A second resistance variable insulating layer(230) is formed on the resistance variable charge trapping layer. A gate layer(240) is formed on the second resistance variable insulating layer.