| 摘要 |
A method for depositing a low temperature polysilicon using inert gas is provided to improve productivity of a polysilicon thin film deposition by depositing a polysilicon thin film without moving a substrate to another chamber for a laser annealing or a dehydrogenation process. A substrate is received on a substrate receiving unit in a chamber. Plasma is generated by using inert gas in the chamber(ST10). Plasma is generated by using a material containing Si in the chamber(ST30). A Si radical is deposited on the substrate to form a polysilicon thin film(ST40). Plasma is generated by using inert gas in the chamber. The inert gas is selected from H2 or group VIII elements. The plasma is sustained during 1 to 3 minutes. The plasma is generated below 15 mTorr of inner pressure of the chamber.
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