HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A high efficiency light emitting diode and a manufacturing method thereof are provided to improve optical extraction efficiency of the light emitting diode by an upper insulating layer having an unevenness plane according to the rough surface of a semiconductor stacked stru. CONSTITUTION: A semiconductor stacked structure(30) is formed in a supporting substrate(41). The semiconductor stacked structure comprises a p-type compound semiconductor layer(29), an active layer(27), and an n-type compound semiconductor layer(25). A protective layer(31) is formed between the supporting substrate and the semiconductor stacked structure. A reflective metal layer(33) is formed between the protective layer and the supporting substrate. A barrier metal layer(35) is formed between the supporting substrate and the reflective metal layer. A first electrode pad is formed on the semiconductor stacked structure.