发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To simplify a process for manufacturing a semiconductor device and to suppress oxidation of a metal element-containing film. <P>SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: carrying a substrate provided with a metal element-containing film and an insulating film formed on the metal element-containing film into a processing chamber, and supporting the substrate by a substrate support provided in the processing chamber; supplying a reaction gas containing excited-state oxygen and either or both of excited-state hydrogen and excited-state nitrogen onto the substrate in the processing chamber to process the substrate; and carrying out the substrate from the processing chamber. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012084847(A) 申请公布日期 2012.04.26
申请号 JP20110151045 申请日期 2011.07.07
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NAKAYAMA MASANORI
分类号 H01L21/31;C23C16/56;H01L21/28;H01L21/316;H01L21/677;H01L21/8242;H01L27/108 主分类号 H01L21/31
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