发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To simplify a process for manufacturing a semiconductor device and to suppress oxidation of a metal element-containing film. <P>SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: carrying a substrate provided with a metal element-containing film and an insulating film formed on the metal element-containing film into a processing chamber, and supporting the substrate by a substrate support provided in the processing chamber; supplying a reaction gas containing excited-state oxygen and either or both of excited-state hydrogen and excited-state nitrogen onto the substrate in the processing chamber to process the substrate; and carrying out the substrate from the processing chamber. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012084847(A) |
申请公布日期 |
2012.04.26 |
申请号 |
JP20110151045 |
申请日期 |
2011.07.07 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
NAKAYAMA MASANORI |
分类号 |
H01L21/31;C23C16/56;H01L21/28;H01L21/316;H01L21/677;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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