发明名称 HIGH ENERGY DENSITY AND LOW LEAKAGE ELECTRONIC DEVICES
摘要 A magnetic capacitor includes two electrode layers, an insulator layer, and one or more magnetized layers. The insulator layer is located between the first electrode layer and the second electrode layer. The one or more magnetized layers include one or more ferro-magnetic elements that are magnetized. The one or more magnetized layers are located so that the one or more ferro-magnetic elements apply a magnetic field to the insulator layer to improve an electrical property of the insulator layer. Magnetic fields applied perpendicular to the electrode layers increase the capacitance and electrical energy storage of the insulator layer. Magnetic fields applied parallel to the electrode layers decrease the leakage current and increase the breakdown voltage of the insulator layer. The one or more ferro-magnetic elements used can include ferro-magnetic plates or magnetic nanodots. The one or more magnetized layers can be located between or outside of the electrode layers.
申请公布号 US2012099240(A1) 申请公布日期 2012.04.26
申请号 US20100908066 申请日期 2010.10.20
申请人 CHANG CHUN-YEN 发明人 CHANG CHUN-YEN
分类号 H01G4/002;H01G4/00 主分类号 H01G4/002
代理机构 代理人
主权项
地址