| 摘要 |
According to one embodiment, a resistance change type memory includes a first bit line extending in a first direction, a first word line extending in a second direction, a first bipolar transistor which is a first drive type and has a first emitter, a first base, and a first collector, a second bipolar transistor which is a second drive type different from the first drive type and has a second emitter, a second base, and a second collector, and a first memory element which has first and second terminals and in which a change in resistance state thereof is associated with data. The first terminal is connected to the first and second emitters, the second terminal is connected to the first bit line, and the first and second bases are connected to the first word line.
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