发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
When a silicon through electrode is to be formed from a back surface (the surface on which a semiconductor device is not formed) of a silicon substrate, a wide range of an interlayer insulating film made of a Low-k material absorbs moisture, and there is a problem that the electrical characteristics of wiring are degraded. The above-described problem can be solved by forming at least a single ring-shaped frame laid out to enclose the silicon through electrode by using metal wirings in plural layers and a connection via connecting the upper and lower metal wirings in a Low-k material layer penetrated by the silicon through electrode and by forming a moisture barrier film made up of at least a metal wiring and a connection via between the silicon through electrode and a circuit wiring formed in the vicinity of the silicon through electrode. |
申请公布号 |
US2012098106(A1) |
申请公布日期 |
2012.04.26 |
申请号 |
US200913381070 |
申请日期 |
2009.07.01 |
申请人 |
AOKI MAYU;TAKEDA KENICHI;HOZAWA KAZUYUKI |
发明人 |
AOKI MAYU;TAKEDA KENICHI;HOZAWA KAZUYUKI |
分类号 |
H01L23/522;H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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