| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent SAC(Self-Aligned Contact) failure between a contact hole and a gate since a spacer is formed by depositing a spacer material on one side of an outermost contact hole. CONSTITUTION: A pattern is formed on a semiconductor substrate. An insulating layer is formed on the pattern and on the semiconductor board. A contact hole(130) is formed by etching the insulating layer until the semiconductor substrate is exposed. A barrier layer(115) is formed on the contact hole and the insulating layer. One side of an outermost contact hole is blocked. A spacer is selectively formed on one side of the outermost contact hole.
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