METHOD FOR MANUFACTURING LARGE DIAMETER SINGLE CRYSTAL INGOT

摘要

PURPOSE: A method for manufacturing a large diameter single crystalline ingot is provided to easily create the large diameter single crystalline ingot more than 450mm having no electric potential by controlling thermal stress lower than critical resolved shear stress. CONSTITUTION: A quartz crucible(112) accepts silicon solution(SM). A chamber(110) offers a space for making a single crystalline ingot(IG) grow up. A heater(120) is installed in the outer edge of a graphite crucible(114). A side insulation system(130) is composed of a heat shield ring(132) and a side insulating material(134) in order to shield heat. An upper insulation system(150) consisting of a heater cover(152) and an upper insulating material(154) is attached to the upper side of the side insulation system.