SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a vertical GaN-based semiconductor device capable of reducing on-resistance while obtaining improved breakdown voltage performance by a p-type GaN barrier layer.

SOLUTION: A semiconductor device comprises: a regrowth layer 27 including a channel located on the wall surfaces of an opening 28; a p-type barrier layer 6 whose end surfaces are coated; a source layer 7 contacting on the p-type barrier layer; a gate electrode G located on the regrowth layer; and source electrodes S located around the opening. The source layer 7 has a superlattice structure, the superlattice structure being a stack including a first layer (a layer) having a smaller lattice constant than the p-type barrier layer and a second layer (b layer) having a larger lattice constant than the first layer.

COPYRIGHT: (C)2012,JPO&INPIT