| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable forming a plurality of transistors having different sidewall widths on a substrate with excellent accuracy without the occurrence of etching of an element isolation region. <P>SOLUTION: In a method of manufacturing a semiconductor device, first, a first insulating film 151 and a second insulating film 152 are sequentially formed so as to cover a first gate electrode 134 and a second gate electrode 144. Next, a portion of the second insulating film 152 formed on a first region 103 is removed. Subsequently, a third insulating film 153 is formed on a substrate 101. Subsequently, first outside sidewalls 136 composed of the third insulating film 153 are formed on the side surfaces of the first gate electrode 134, and second outside sidewalls 146 composed of the second insulating film 152 and the third insulating film 153 are formed on the side surfaces of the second gate electrode 144, by selectively removing the second insulating film 152 and the third insulating film 153. <P>COPYRIGHT: (C)2012,JPO&INPIT |
