| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a distance sensor and a distance image sensor capable of achieving high speed transfer of electrical charge while improving sensitivity. <P>SOLUTION: A light receiving area is a rectangular shape where a planar shape has a pair of opposing long sides in a first direction and a pair of opposing short sides in a second direction. A first and a second semiconductor areas FD1 and FD2 are arranged to be spatially separated from each other along each long side. A first and a second gate electrodes TX1 and TX2 are arranged between corresponding semiconductor areas FD1 and FD2 and the light receiving area. Third gate electrodes TX3 are respectively arranged to be spatially separated between the first and the second gate electrodes TX1 and TX2 arranged along the long sides. Potential adjusting electrodes EL are overlapped with an area located between the third gate electrodes TX3 in the light receiving area. Potential adjusting signals having the same phase as that of electrical charge transfer signals given to the third gate electrodes TX3 and having electrical potential lower than that of the electrical charge transfer signals are given to the potential adjusting electrodes EL. <P>COPYRIGHT: (C)2012,JPO&INPIT |
