发明名称 METHOD AND APPARATUS TO CONTROL IONIC DEPOSITION
摘要 A sputtering source having a bias field generated between the substrate and the sputtering source. A conductive louver or grid arrangement is positioned in front of the substrate, and is biased by an RF or DC source. The substrate itself may or may not be biased, as needed. The conductive louvers are rotatable to also function as shutters or collimator to control the flux of the deposited species. The shutter arrangement is mounted onto the sputtering opening of a facing target source (FTS). The shutter is biased by an RF or DC source and the applied power and rotation position of each slat in the shutter are controlled to achieve the desired flux and collimation.
申请公布号 US2012097525(A1) 申请公布日期 2012.04.26
申请号 US201113093775 申请日期 2011.04.25
申请人 HARKNESS, IV SAMUEL D.;TRAN QUANG N. 发明人 HARKNESS, IV SAMUEL D.;TRAN QUANG N.
分类号 C23C14/34 主分类号 C23C14/34
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