| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a distance sensor and a distance image sensor capable of achieving high speed transfer of electrical charge while improving sensitivity. <P>SOLUTION: A light receiving area is a rectangular shape where a planar shape has a pair of opposing long sides in a first direction and a pair of opposing short sides in a second direction. A first and a second semiconductor areas FD1 and FD2 are arranged to be spatially separated from each other along each long side. A first and a second gate electrodes TX1 and TX2 are arranged between corresponding semiconductor areas FD1 and FD2 and the light receiving area. Third gate electrodes TX3<SB POS="POST">1</SB>and TX3<SB POS="POST">2</SB>are respectively arranged to be spatially separated between the first and the second gate electrodes TX1 and TX2 arranged along the long sides. The third gate electrodes TX3<SB POS="POST">1</SB>and TX3<SB POS="POST">2</SB>have a first electrode portion TX3a located between a third semiconductor area FD3 and the light receiving area and a second electrode portion TX3b that is overlapped with the light receiving area and has a width in a second direction narrower than the first electrode portion. <P>COPYRIGHT: (C)2012,JPO&INPIT |
